Micron Reportedly Planning ¥1.5 Trillion HBM Fab in Hiroshima Amid Rising AI Demand

Micron Technology, Inc. (NASDAQ:MU) is one of the fastest-growing semiconductor stocks to buy. On November 29, 2025, multiple outlets cited a Nikkei Asia report that Micron plans to invest ¥1.5 trillion (~$9.6B) to build a new high-bandwidth memory (HBM) fab at its Hiroshima site, with construction slated to start around May 2026 and shipments targeted for circa 2028. Japan’s Ministry of Economy, Trade and Industry (METI) is expected to subsidize up to ¥500 billion of the project. That said, no official confirmation has come from the company.

Micron Reportedly Planning ¥1.5 Trillion HBM Fab in Hiroshima Amid Rising AI Demand

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Some reports frame the move as part of Japan’s push to onshore advanced semiconductor capacity and as Micron’s bid to scale HBM for AI data centers, where demand continues to run hot. Reports note the plan would expand Micron’s existing Hiroshima footprint and position it to compete more directly in next-gen HBM against SK hynix and Samsung as accelerator vendors ramp AI systems.

Micron Technology, Inc. (NASDAQ:MU) designs and manufactures memory and storage solutions, including DRAM, NAND, and HBM, for data center, AI, PC, mobile, automotive, and embedded markets, with major manufacturing sites in the U.S. and Asia.

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